Part Number | SI4368DY-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET N-CH 30V 17A 8-SOIC |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 17A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 80nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 8340pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.6W (Ta) |
Rds On (Max) @ Id, Vgs | 3.2 mOhm @ 25A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
SI4368DY-T1-E3
RENRSAS
140
0.4
Gallop Great Holdings (Hong Kong) Limited
SI4368DY-T1-E3
rene
265135
0.95
Cicotex Electronics (HK) Limited
SI4368DY-T1-E3
ren
100
1.5
Yingxinyuan INT'L (Group) Limited
SI4368DY-T1-E3
RENESA
26596
2.05
N&S Electronic Co., Limited
SI4368DY-T1-E3
RENESAS/NEC
4868000
2.6
Shenzhen WTX Capacitor Co., Ltd.