Part Number | SI4599DYT1GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Renesas |
Description | MOSFET N/P-CH 40V 6.8A 8SOIC |
Series | TrenchFET |
Packaging | |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 6.8A, 5.8A |
Rds On (Max) @ Id, Vgs | 35.5 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 20V |
Power - Max | 3W, 3.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
Hot Offer
SI4599DY-T1-GE3
RENESAS/NEC
52520
3.63
MAN CHEONG (HK) ELECTRONICS LIMITED
SI4599DY-T1-GE3
RENRSAS
17572
0.38
HXY Electronics (HK) Co.,Limited
SI4599DY-T1-GE3
rene
180
1.1925
SUNTOP SEMICONDUCTOR CO., LIMITED
SI4599DY-T1-GE3
ren
286871
2.005
Cicotex Electronics (HK) Limited
SI4599DY-T1-GE3
RENESA
12200
2.8175
CIS Ltd (CHECK IC SOLUTION LIMITED)