Part Number | SI4948BEY-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Renesas |
Description | MOSFET 2P-CH 60V 2.4A 8-SOIC |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 2.4A |
Rds On (Max) @ Id, Vgs | 120 mOhm @ 3.1A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.4W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
Si4948BEY-T1-GE3
RENRSAS
4442
0.77
Hongkong Shengshi Electronics Limited
Si4948BEY-T1-GE3
rene
8453
1.66
Hong Kong Capital Industrial Co.,Ltd
SI4948BEY-T1-GE3
ren
4399
2.55
Gallop Great Holdings (Hong Kong) Limited
SI4948BEY-T1-GE3
RENESA
4381
3.44
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI4948BEY-T1-GE3
RENESAS/NEC
5699
4.33
Shenzhen WTX Capacitor Co., Ltd.