Part Number | SIA906EDJ-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Renesas |
Description | MOSFET 2N-CH 20V 4.5A SC70-6 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4.5A |
Rds On (Max) @ Id, Vgs | 46 mOhm @ 3.9A, 4.5V |
Vgs(th) (Max) @ Id | 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 10V |
Power - Max | 7.8W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK SC-70-6 Dual |
Supplier Device Package | PowerPAK SC-70-6 Dual |
Image |
Hot Offer
SIA906EDJ-T1-GE3
RENESAS/NEC
8397
6.13
TONGHECHUANGYUAN CO., LIMITED
SiA906EDJ-T1-GE3
RENRSAS
1928
1.65
HK HEQING ELECTRONICS LIMITED
SIA906EDJ-T1-GE3
rene
528
2.77
Gallop Great Holdings (Hong Kong) Limited
SIA906EDJ-T1-GE3
ren
9595
3.89
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SIA906EDJ-T1-GE3 MOS()
RENESA
1827
5.01
CIS Ltd (CHECK IC SOLUTION LIMITED)