Description
MOSFET 2P-CH 20V 4.5A SC-70-6 Series: TrenchFET? FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 4.5A Rds On (Max) @ Id, Vgs: 54 mOhm @ 3.8A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250米A Gate Charge (Qg) @ Vgs: 25nC @ 8V Input Capacitance (Ciss) @ Vds: - Power - Max: 7.8W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual
Part Number | SIA923EDJ-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Renesas |
Description | MOSFET 2P-CH 20V 4.5A SC-70-6 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4.5A |
Rds On (Max) @ Id, Vgs | 54 mOhm @ 3.8A, 4.5V |
Vgs(th) (Max) @ Id | 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 7.8W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK SC-70-6 Dual |
Supplier Device Package | PowerPAK SC-70-6 Dual |
Image |
SiA923EDJ-T1-GE3
RENRSAS
5000000
0.56
Hongkong Shengshi Electronics Limited
SIA923EDJ-T1-GE3
rene
3000
1.5875
HK HEQING ELECTRONICS LIMITED
SIA923EDJ-T1-GE3
ren
55200
2.615
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SIA923EDJ-T1-GE3
RENESA
18653
3.6425
King-Pai Technology (HK) Co.,Limited
SIA923EDJ-T1-GE3
RENESAS/NEC
3530
4.67
Gallop Great Holdings (Hong Kong) Limited