Part Number | STB28N65M2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET N-CH 650V 20A D2PAK |
Series | MDmesh,M2 |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1440pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 170W (Tc) |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 10A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
STB28N65M2
RENRSAS
2676
1.7
LIXINC Electronics Co., Limited
STB28N65M2**
rene
2303
2.9475
CIS Ltd (CHECK IC SOLUTION LIMITED)
STB28N65M2
ren
7687
4.195
Hong Kong YST Electronics Co., Limited
STB28N65M2
RENESA
395
5.4425
Senyes Electronic (HK) Limited
STB28N65M2
RENESAS/NEC
9922
6.69
ONSTAR ELECTRONICS CO., LIMITED