Part Number | STW24N60M2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET N-CH 600V 18A TO247 |
Series | MDmesh,II Plus |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1060pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Image |
STW24N60M2
RENRSAS
6560
1.31
LIXINC Electronics Co., Limited
STW24N60M2
rene
7359
2.5475
HK XINYI COMPONENTS ASIA CO., LIMITED
STW24N60M2
ren
1801
3.785
Corich International Ltd.
STW24N60M2
RENESA
109
5.0225
Riking Technology (HK) Co., Limited
STW24N60M2
RENESAS/NEC
5211
6.26
Antony Electronic Ltd.