Part Number | STW50N65DM2AG |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Renesas |
Description | MOSFET N-CH 650V 28A |
Series | Automotive, AEC-Q101, MDmesh |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3200pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 87 mOhm @ 19A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Image |
STW50N65DM2AG
RENRSAS
2076
1.25
Gallop Great Holdings (Hong Kong) Limited
STW50N65DM2AG
rene
3484
2.3425
HK XINYI COMPONENTS ASIA CO., LIMITED
STW50N65DM2AG
ren
5999
3.435
AMAX ELECTRONIC TECHNOLOGY PTE.LTD.
STW50N65DM2AG
RENESA
9790
4.5275
Origchip (HK) Electronic Limited
STW50N65DM2AG
RENESAS/NEC
8346
5.62
Xiefeng (HK) INT'L Electronics Limited